Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors

Matthieu Landel (1) , Stéphane Lefebvre (1) , Denis Labrousse (1) , Cyrille Gautier (2) , Fadi Zaki (3) , Zoubir Khatir (3)

1 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie
2 Safran Engineering Services
3 SATIE-TEMA - Technologies pour une Electro-Mobilité Avancée

This paper presents an experimental study of the robustness of 600 V normally-off GaN High Electron Mobility Transistors (HEMT) submitted to Short-Circuits (SC) operations. The obtained results reveal a severe dispersal in terms of SC robustness: some devices were able to support SC of a very long duration but others failed immediately, for the same electrical and thermal initial constraints. In order to understand this dispersal, static characterizations and collapse-related measurements have been carried out on a large number of devices from the same manufacturer with the same blocking voltage and different current ratings. Then, destructive short-circuits were launched on these transistors. Finally, the time leading to failure (TLF) for a given DC voltage was correlated with the parameters extracted from the characterizations.

Mots clés: GAN HEMTS/SHORT-CIRCUITS

Mots clés: ELECTRICITE; DIELECTRIQUE; ELECTRONIQUE; CIRCUIT COURT

Domaines: Energie électrique

Matthieu Landel, Stéphane Lefebvre, Denis Labrousse, Cyrille Gautier, Fadi Zaki, et al.. Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors. 2017 International Exhibition and Conference for Power Electronics and Energy Management (PCIM 2017), May 2017, Nuremberg, Germany. pp.1-9. ⟨hal-01671585⟩